Semiconductor memory with boosted word line

Details Semiconductor memory with boosted word line Semiconductor memory with boosted word line

G - Physics

11

C

352/82.1

G11C 7/00 (2006.01) G11C 8/08 (2006.01) G11C 11/408 (2006.01)

Patent

CA 1241444

- 11 - SEMICONDUCTOR MEMORY WITH BOOSTED WORD LINE ABSTRACT A dynamic random access memory has a row conductor boosted in excess of the power supply level during an initial portion of a memory cycle. The voltage is then clamped at the supply level during the middle portion of the cycle, and optionally boosted again during the refresh portion. This allows improved performance and reliability, especially in memories employing bit lines precharged to one-half the power supply level.

501280

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