Closed tube gettering

Details Closed tube gettering Closed tube gettering

H - Electricity

01

L

356/116

H01L 21/02 (2006.01) H01L 21/223 (2006.01) H01L 21/322 (2006.01)

Patent

CA 1207089

ABSTRACT OF THE DISCLOSURE The present invention is directed to a process for improving certain electrical parameters of a power semiconductor device by gettering impurities during an initial closed tube diffusion. The gettering agent is a non-metallic chlorine compound which is disposed within a sealed quartz capillary and the sealed quartz capillary is disposed within a sealed quartz tube with a source of a suitable doping agent and wafers of a semiconductor mater- ial which are to be doped. The quartz tube is then dis- posed within a diffusion furnace and the gettering of impurities is carried out during the diffusion.

446628

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