Sublimation of silicon carbide to produce large, device...

Details Sublimation of silicon carbide to produce large, device... Sublimation of silicon carbide to produce large, device...

H - Electricity

01

L

356/177, 148/2.5

H01L 21/203 (2006.01) C30B 23/00 (2006.01) C30B 23/02 (2006.01) C30B 29/36 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1331730

Abstract The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth surface of seed crystals, and by controlling the thermal gradient between the source materials and the seed crystal.

581145

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