H - Electricity – 03 – F
Patent
H - Electricity
03
F
328/198
H03F 1/30 (2006.01) H03B 5/04 (2006.01) H03B 5/18 (2006.01) H03F 3/19 (2006.01) H03B 1/00 (2006.01)
Patent
CA 1191213
Abstract There is described s transistor circuit which is capable of reducing power consumption in voltage dividing resistors used in biasing and of sup- pressing temperature dependent variations in transistor characteristics. The transistor circuit has a first transistor for amplification or oscillation and a biasing circuit for supplying a D.C. biasing voltage to the base of the first transistor. The biasing circuit comprises a voltage dividing resistor having an output terminal for providing a divided D.C. voltage, and a second transistor constituting an emitter follower circuit, whose base is connected to the output terminal and whose emitter is coupled to the base of the first transistor to provide the D.C. biasing voltage. The second transistor is opposite in conductivity type from the first transistor.
416133
Nippon Electric Co. Ltd.
Smart & Biggar
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