Sintered silicon carbide ceramic body

Details Sintered silicon carbide ceramic body Sintered silicon carbide ceramic body

C - Chemistry, Metallurgy

04

B

261/6

C04B 35/56 (2006.01) C04B 35/565 (2006.01) C04B 35/64 (2006.01)

Patent

CA 1332616

SINTERED SILICON CARBIDE CERAMIC BODY Abstract of the Disclosure Pressureless sintering of silicon carbide to produce ceramic bodies having 75% and greater theoretical densities, can be accomplished by firing shaped bodies, containing finely divided silicon carbide, boron source such as boron carbide, carbon source such as phenolic resin and a temporary binder, at a sintering temperature of from about 1900°C to about 2500°C.

251922

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