Germanium channel silicon mosfet

Details Germanium channel silicon mosfet Germanium channel silicon mosfet

H - Electricity

01

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356/149

H01L 21/335 (2006.01) H01L 21/336 (2006.01) H01L 29/165 (2006.01) H01L 29/76 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1298670

YO986-100 GERMANIUM CHANNEL SILICON MOSFET ABSTRACT OF THE INVENTION An alloy layer comprising germanium and silicon is grown on top of a silicon substrate. The alloy layer is kept thin enough for proper pseudo- morphic, dislocation free growth. A layer of silicon is applied to the alloy layer. The initial silicon layer is from two to three times as thick as the alloy layer. Approximately the upper two-thirds of the silicon layer is oxidized, either thermally, anodically or by plasma anodization. The silicon layer that remains between the silicon dioxide and the alloy layer is kept thin enough so that a parasitic channel does not form on the interface between the silicon and the silicon dioxide. The germanium alloyed channel is thus suitably bounded by silicon crystalline structures on both of the channel layer surfaces. The barrier heights between silicon dioxide and silicon are very large thus providing good carrier confinement. A suitably applied voltage will result in a region of high mobility charge carriers at the interface between the alloy layer and the upper silicon layer.

611437

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