Method for controlling lateral diffusion of silicon in a...

Details Method for controlling lateral diffusion of silicon in a... Method for controlling lateral diffusion of silicon in a...

H - Electricity

01

L

117/102, 356/12

H01L 21/314 (2006.01) C23C 10/02 (2006.01) C23C 10/44 (2006.01)

Patent

CA 1231599

AN IMPROVED METHOD FOR CONTROLLING LATERAL DIFFUSION OF SILICON IN A SELF-ALIGNED TiSi2 PROCESS ABSTRACT OF THE DISCLOSURE An improved method for forming a titanium silicide layer comprising placing a silicon layer over- coated with titanium in an ambient atmosphere of ultra- pure nitrogen and heating the overcoated layer with radiation from a tungsten-halogen source.

487620

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