Method of manufacturing a large area semiconductor device

Details Method of manufacturing a large area semiconductor device Method of manufacturing a large area semiconductor device

Category

G - Physics

Subcategory

09

Subsubcategory

F

CPC

345/9

IPC codes

G09F 9/33 (2006.01)

Type

Patent

Patent number

CA 1254987

Description

A B S T R A C T A method of manufacturing an array of semi-conductor crystals is disclosed. A base sheet of an insulator material is provided with a flat upper surface. A plurality of grooves are then formed on the flat upper surface of said sheet. A purified material capable of forming semi-conductor crystals is deposited in the grooves, and the base sheet, with purified material thereon is subjected to a zone melting crystal growth procedure, to grow, simultaneously, a plurality of crystals of pure-semi-conductor material in said grooves.

Application Number

443792

Affiliated with

Also associated with

Rating

Method of manufacturing a large area semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a large area semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a large area semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1318651