Method of forming a large surface area integrated circuit

Details Method of forming a large surface area integrated circuit Method of forming a large surface area integrated circuit

H - Electricity

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356/147

H01L 21/70 (2006.01) G03F 7/16 (2006.01) H05K 1/00 (2006.01) H05K 3/00 (2006.01)

Patent

CA 1222834

ABSTRACT Disclosed is a method of forming a large area electronic element, e.g., a large area integrated circuit, having at least one dimension in excess of three inches, by forming a film of photoresist separate from a surface to be etched, and thereafter depositing the film of photoresist on the surface to be etched. The deposited photoresist film is then exposed to actinic radiation and developed, and the uncovered, underlying surface is thereafter etched.

462575

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