Method for production of high purity aluminum nitrides

Details Method for production of high purity aluminum nitrides Method for production of high purity aluminum nitrides

C - Chemistry, Metallurgy

01

B

23/223

C01B 21/072 (2006.01)

Patent

CA 1301430

ABSTRACT OF THE DISCLOSURE An efficient, low-temperature process for the preparation of highly pure, free-flowing aluminum nitride powder without oxygen contamination, comprising the steps of: (1) forming a mixture of (a) (CH3)3-Si-?-Si-(CH3)3 , and (b) AlCl3; (2) reacting the mixture formed in step (1) at a temperature of from 0°C to 150°C and thereby forming H Cl2-Al-N Si(CH3)3 ; (3) maintaining the C12-Al-NH-Si(CH3)3 formed in step (2) at a temperature of from 170°C to 200°C and thereby forming Cl-Al-NH and (CH3)3-SiCl; and (4) maintaining the Cl-Al-NH formed in step (3) at a temperature of at least 450°C and thereby forming H2, Cl2, and AlN.

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