H - Electricity – 03 – K
Patent
H - Electricity
03
K
328/200
H03K 17/08 (2006.01) G05F 1/577 (2006.01) H01L 27/02 (2006.01) H01L 27/092 (2006.01) H03K 17/0814 (2006.01) H03K 17/16 (2006.01) H03K 17/22 (2006.01)
Patent
CA 1175503
CMOS TURN-ON CIRCUIT ABSTRACT OF THE DISCLOSURE A CMOS integrated circuit which requires a higher and a lower supply voltage source, often includes a parasitic diode commonly in the form of a thyristor which is formed with its anode connected to the lower voltage supply terminal and its cathode to the higher voltage supply terminal. The present invention is an FET which has its source-drain circuit connected between the lower voltage terminal of the integrated circuit and the lower voltage source, and its gate to the higher voltage source. This protects the integrated circuit diode from fusing if either passive or dynamic conditions result in the faster voltage rise at the anode relative to the cathode when supply voltage is applied to the integrated circuit, since the voltage at the anode is protected from rising faster than the cathode.
381955
Mitel Corporation
Shapiro Cohen
LandOfFree
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