Apparatus and process for making solar grade silicon

Details Apparatus and process for making solar grade silicon Apparatus and process for making solar grade silicon

C - Chemistry, Metallurgy

01

B

23/325, 23/389

C01B 33/02 (2006.01) B01J 19/02 (2006.01) C01B 33/029 (2006.01) C01B 33/03 (2006.01)

Patent

CA 1204580

APPARATUS AND PROCESS FOR MAKING SOLAR GRADE SILICON ABSTRACT OF THE DISCLOSURE A reactor apparatus adapted for continu- ously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH4), is disclosed. The reactor apparatus includes an elongated reactor body having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body through an efficiently cooled inlet tube assembly and a relatively thin carbon or graphite septum, The septum being in contact on one side with the cooled inlet and the heated interior of the reactor on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor and renders the operation of the inlet tube assembly substantially free of clogging. The precursor gas flows in the reactor in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon produced in the reactor apparatus may be used directly in a Czochralski or other crystal shap- ing equipment.

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