H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/182
H01L 21/20 (2006.01) C23C 16/455 (2006.01) C30B 25/14 (2006.01) C30B 31/16 (2006.01) C23C 16/44 (2006.01)
Patent
CA 1262294
ABSTRACT Method of manufacturing a semiconductor device including the step of depositing from the vapour phase layers on a substrate. A method of manufacturing a semiconductor device including the step of depositing from the vapour phase layers on a substrate in the chamber of a reactor in which a vector gas and a reactant gas are introduced, characterized in that the vector gas and the reactant gas are introduced into the chamber of the reactor by means of a system of three coaxial tubes, the first of which (the inner tube) has a diameter smaller than that of the second tube (the intermediate tube), which in turn has a diameter smaller than that of the third tube (the outer tube), the first ends of these tube being independent, but the second ends thereof situated in the proximity of each other cooperating with each other so as to form a valve controlling the introduction of the reactant gas into the hot zone of the chamber of the reactor mixed with a vector gas, these tubes being disposed in such a manner that: the said second end of the inner tube merges into the intermediate tube, the said second end of the intermediate tube provided with a restriction merges into the outer tube, the said second and of the outer tube provided with a restriction merges into the chamber of the reactor in the proximity of the hot zone, the said first end of the intermediate tube is provided with a valve V, in that the reactant gas is introduced through the first end of the inner tube and circulates in the direction of the second end to the intermediate tube, in that the vector fluid is introduced through the first end of the outer tube and circulates in the direction of the second end to the chamber of the reactor, in that, the flow rate of the vector gas being chosen to be very much higher than the flow rate of the reactant gas, the tube system behaves like a commutation valve which directs the whole quantity of reactant gas to the chamber of the reactor when the valve V is closed and to the first end of the intermediate tube when the valve V is opened. Application: Manufacture of semiconductor devices of the group III-V. Reference: Figure 1.
538187
Fetherstonhaugh & Co.
Frijlink Peter Michael
Philips Electronics N.v.
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