Method for forming deposited film

Details Method for forming deposited film Method for forming deposited film

C - Chemistry, Metallurgy

23

C

356/179, 117/85,

C23C 16/44 (2006.01) B05D 3/06 (2006.01) C23C 16/48 (2006.01) G03G 5/082 (2006.01) H01L 21/205 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1315616

ABSTRACT OF THE DISCLOSURE A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.

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