Complementary metal-oxide-semiconductor transistor and...

Details Complementary metal-oxide-semiconductor transistor and... Complementary metal-oxide-semiconductor transistor and...

G - Physics

11

C

352/82.4

G11C 11/24 (2006.01) G11C 11/404 (2006.01) H01L 27/06 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1314991

YO987-103 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR AND ONE-CAPACITOR DYNAMIC-RANDOM-ACCESS MEMORY CELL AND FABRICATION PROCESS THEREFOR ABSTRACT OF THE INVENTION A complementary MOS one-capacitor dynamic RAM cell which operates with a non-boosted wordline without a threshold loss problem and which includes one storage capacitor and n- and p-type transfer devices connected to the storage capacitor which function as two complementary transistor devices having gates controlled by complementary signals on the RAM wordlines.

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