Method for fabricating improved oxide defined transistors...

Details Method for fabricating improved oxide defined transistors... Method for fabricating improved oxide defined transistors...

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H01L 21/82 (2006.01) H01L 21/225 (2006.01) H01L 21/285 (2006.01) H01L 21/331 (2006.01) H01L 29/06 (2006.01) H01L 29/08 (2006.01) H01L 29/10 (2006.01) H01L 29/72 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1219683

ABSTRACT Two insulating layers may be employed to define boundaries of junctions in transistor structures useful in integrated circuit fabrication. The junctions may overlie one another, have approximately equal areas, and terminate in the insulating layers.

463437

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