Method of forming patterns

Details Method of forming patterns Method of forming patterns

H - Electricity

01

L

356/128, 148/3.2

H01L 21/465 (2006.01) H01L 21/033 (2006.01) H01L 21/28 (2006.01) H01L 21/316 (2006.01) H01L 21/321 (2006.01)

Patent

CA 1186600

Abstract of the Disclosure A pattern utilized to prepare a diffraction grating, an element of a semiconductor device, for example a silicon island, a device isolation pattern or a semiconductor element such as a MOS FET is formed by the steps of forming an oxidizable region of a predetermined pattern on a substrate and oxidizing the oxidizable region for forming an oxide region pattern at least a portion of side walls of the oxidizable region. The resulting pattern is extremely fine and can be formed at a low cost and has sufficiently large hight with respect to the width. Furthermore the pattern can be formed at a relatively low temperature.

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