Semiconductor device for generating an electron beam

Details Semiconductor device for generating an electron beam Semiconductor device for generating an electron beam

H - Electricity

01

J

356/119

H01J 1/308 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1262578

PHN11.670 21 16.6.1986 ABSTRACT: Semiconductor device for generating an electron beam. By providing in a reverse biased junction cathode an intrinsic semiconductor region (5) between the n-type surface region (3) and the p-type zone (4), a maxi- mum field is present over the intrinsic region (5) in the operating condition. The efficiency of the cathode is increased because avalanche multiplication can now occur over a greater distance, whilst in addition electrons to be emitted at a sufficient energy are generated by means of tunnelling.

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