Technique for the growth of epitaxial compound semiconductor...

Details Technique for the growth of epitaxial compound semiconductor... Technique for the growth of epitaxial compound semiconductor...

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 29/42 (2006.01) C30B 25/02 (2006.01)

Patent

CA 1250511

Abstract of the Disclosure A technique is described for the deposition of group III-V compound semiconductor films in epitaxial form wherein the group V source material employed is in solid elemental or compound form. The prime advantage of such technique resides in the elimination of the need for the highly toxic arsine gas for this purpose while permitting the preparation of a product essentially free of contamination.

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