Ion sensitive field effect transistor (isfet) sensor with...

Details Ion sensitive field effect transistor (isfet) sensor with... Ion sensitive field effect transistor (isfet) sensor with...

G - Physics

01

N

G01N 27/414 (2006.01)

Patent

CA 2538232

An ion sensitive field effect transistor Ph sensor (200) is provided with an improved sensor gate configuration. Specifically, a tantalum oxide-sensing gate (214) is disposed on top of an alumina layer (212). The tantalum oxide- sensing gate (214) provides advantageous sensitivity, while the alumina barrier layer (212) increases sensor longevity in situations where the sensor (200) is exposed to caustic cleaning processes such as Clean In Place processes.

L'invention concerne un capteur (200) pH ISFET à configuration de grille améliorée. De manière spécifique, une grille de détection d'oxyde de tantale (214) est disposée sur une couche d'alumine (212). La grille de détection d'oxyde de tantale (214) permet d'obtenir une meilleure sensibilité, et la couche barrière d'alumine (212) augmente la longévité du capteur dans des situations dans lesquelles le capteur (200) est exposé à des procédés de nettoyage caustique de type procédés de nettoyage en place.

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