Photodetectors using iii-v-nitrides

Details Photodetectors using iii-v-nitrides Photodetectors using iii-v-nitrides

H - Electricity

01

L

H01L 27/14 (2006.01)

Patent

CA 2329182

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

Affiliated with

Also associated with

Rating

Photodetectors using iii-v-nitrides does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photodetectors using iii-v-nitrides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photodetectors using iii-v-nitrides will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1350993