H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/58
H01L 29/86 (2006.01)
Patent
CA 2023737
ABSTRACT OF THE DISCLOSURE A Schottky barrier diode comprises a Schottky contact layer having an increased periphery to area ratio. In the illustrated embodiment, the Schottky contact layer comprises a plurality of individual contact regions interconnected by an overlying metallization layer.
Oyen Wiggs Green & Mutala
Solid State Devices Inc.
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