H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/338 (2006.01) H01L 21/28 (2006.01) H01L 21/337 (2006.01) H01L 29/04 (2006.01) H01L 29/201 (2006.01) H01L 29/778 (2006.01) H01L 29/78 (2006.01) H01L 29/808 (2006.01) H01L 29/812 (2006.01)
Patent
CA 2684876
A substrate of hexagonal SiC is prepared such that the major surface makes a minimum angle of 1° or less against a face intersecting the (0001) face perpendicularly, e.g. the major surface turns to such a direction as the minimum angle against the [0001] direction perpendicular to the (0001) direction is 1° or less. With such an arrangement, the breakdown voltage can be enhanced sharply as compared with a lateral semiconductor device where the major surface of the hexagonal SiC substrate is turning to a direction along the (0001) direction.
Un substrat de SiC hexagonal est préparé de sorte que la surface principale forme un angle minimum de 1° ou moins avec une face coupant la face (0001) perpendiculairement, par exemple, de sorte que la surface principale se tourne dans une telle direction que l'angle minimum avec la direction [0001] perpendiculaire à la direction (0001) est de 1° ou moins. Avec une telle disposition, la tension de claquage peut être fortement améliorée par rapport à un dispositif semi-conducteur latéral dans lequel la surface principale du substrat en SiC hexagonal se tourne vers une direction le long de la direction (0001).
Fujikawa Kazuhiro
Harada Shin
Marks & Clerk
Sumitomo Electric Industries Ltd.
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