Electrically erasable and programmable non-volatile memory...

Details Electrically erasable and programmable non-volatile memory... Electrically erasable and programmable non-volatile memory...

G - Physics

11

C

G11C 16/02 (2006.01) G11C 5/14 (2006.01) G11C 16/06 (2006.01) G11C 16/12 (2006.01) G11C 16/22 (2006.01)

Patent

CA 2257339

To reduce the risks of erroneous data writing into an electrically erasable and programmable non-volatile memory (10) (EEPROM) when a failure in the memory (10) voltage supply (Vcc) occurs during a programming or erasing operation, the memory (10) comprising means (30) of generating programming or erasing high voltage (Vpp), means (SWi, TIi) are provided for maintaining the high voltage (Vpp) supply to the cells (Ci,j) of the memory and capacity (Chv, CR2) of sufficient power to maintain the high voltage (Vpp) during the time required for the programming or erasing operation. The invention is useful particularly for EEPROM memories mounted on chip cards and electronic labels.

Pour pallier les risques d'inscription de données erronées dans une mémoire (10) programmable et effaçable électriquement (EEPROM) lorsqu'une coupure de la tension d'alimentation (Vcc) de la mémoire (10) intervient au cours d'une opération de programmation ou d'effacement, la mémoire (10) comprenant des moyens (30) de production d'une haute tension (Vpp) de programmation ou d'effacement, on prévoit des moyens (SW i, TI i) pour maintenir l'acheminement de la haute tension (Vpp) vers des cellules (C i,j) de la mémoire (10) et une capacité électrique (Chv, CR2) de valeur suffisante pour maintenir la haute tension (Vpp) pendant le temps nécessaire à l'opération de programmation ou d'effacement. Application notamment aux mémoires EEPROM montées dans les cartes à puce et les étiquettes électroniques.

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