Method of forming interlayer-insulating film

Details Method of forming interlayer-insulating film Method of forming interlayer-insulating film

C - Chemistry, Metallurgy

23

C

C23C 16/40 (2006.01) H01L 21/316 (2006.01)

Patent

CA 2051989

Method of Forming Interlayer-Insulating Film Abstract of the Disclosure A silicon oxide film to be used as an interlayer-insulating film in a semiconductor device is formed by a high pressure organic silane-O3 CVD. A semiconductor wafer is placed in a reaction vessel and is heated at a temperature of 400°C. A mixture of an organic silane gas such as TEOS, HMDS and OMCTS and an ozone gas is introduced into the reaction vessel and the reaction is carried out at a pressure higher than the atmospheric pressure, preferably at a pressure of about 2 Torr to form a silicon oxide film having excellent properties. A life time of the ozone gas which serves as an oxiding agent and/or catalyst can be prolonged under the high pressure, and therefore a deposition rate of the silicon oxide film ca be increased and the flatness of the silicon oxide film can be improved. Therefore, the silicon oxide film forming process can be performed efficiently and a flatenning process after the formation of the silicon oxide film can be made simpler. - 18 -

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