Method for deep and vertical dry etching of sio2

Details Method for deep and vertical dry etching of sio2 Method for deep and vertical dry etching of sio2

H - Electricity

01

L

H01L 21/461 (2006.01) H01L 21/311 (2006.01)

Patent

CA 2349032

A method of etching SiO2 to produce vertical sidewalls is disclosed wherein the process is carried out at a high etch rate, using low energy ion bombardment, using C4F8 as a main etchant gas, and controlling the SiO2 sidewall profiles using the temperature of the sample.

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