Chemical vapor deposition with diarsines and polyarsines

Details Chemical vapor deposition with diarsines and polyarsines Chemical vapor deposition with diarsines and polyarsines

C - Chemistry, Metallurgy

30

B

117/83, 148/2.4

C30B 25/02 (2006.01) C23C 16/18 (2006.01) C23C 16/30 (2006.01) C30B 29/42 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2034624

CHEMICAL VAPOR DEPOSITION AND CHEMICALS WITH DIARSINES AND POLYARSINES ABSTRACT OF THE DISCLOSURE A MOCVD process for depositing an arsenic-containing film utilizes an organoarsine compound having at least one As-As bond, in particular, diarsines and compounds having arsenic rings of 5 or 6 arsenic atoms.

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