Method for manufacturing semiconductor device capable of...

Details Method for manufacturing semiconductor device capable of... Method for manufacturing semiconductor device capable of...

H - Electricity

01

L

H01L 21/302 (2006.01) H01L 21/768 (2006.01)

Patent

CA 2299813

In a method for manufacturing a semiconductor device, a first conductive layer is formed above a semiconductor substrate, an insulating layer is formed on the first conductive layer, and a sacrifice layer is formed on the insulating layer. Then, a hole is perforated in the sacrifice layer and the insulating layer. Then, a second conductive layer is formed on the sacrifice layer and within the hole. Then, a metal chemical mechanical polishing operation is performed upon the second conductive layer to expose the sacrifice layer. Finally, the sacrifice layer is removed.

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