Method for forming a dielectric film on a substrate

Details Method for forming a dielectric film on a substrate Method for forming a dielectric film on a substrate

C - Chemistry, Metallurgy

23

C

C23C 16/515 (2006.01)

Patent

CA 2559410

A method for forming a dielectric film on a substrate through reaction of a reactant mixture in a deposition chamber, the reactant mixture being dissociated and ionized by a plasma generated in the deposition chamber. In particular, the method includes applying a first working voltage of a first polarity to an electrode in the deposition chamber for enabling dissociation and ionization of the reactant mixture,and removing undesired electrical charge accumulated on the deposited dielectric film on the substrate by for example, applying a second working voltage of a second polarity to the electrode.

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