A semiconductor doping process

Details A semiconductor doping process A semiconductor doping process

H - Electricity

01

L

H01L 21/00 (2006.01)

Patent

CA 2671958

A doping process, including applying pressure to at least one first phase of a semiconductor containing an electrically inactive dopant and removing the pressure to cause at least one phase transformation of the semiconductor to at least one second phase, wherein the at least one phase transformation activates the dopant so that the at least one second phase includes at least one doped phase of the semiconductor in which the dopant is electrically active.

L'invention concerne un procédé de dopage, comprenant l'application d'une pression à au moins une première phase d'un semi-conducteur contenant un dopant électriquement inactif et le retrait de la pression de façon à provoquer au moins une transformation de phase du semi-conducteur vers au moins une seconde phase, la au moins une transformation de phase activant le dopant, de telle sorte que la au moins une seconde phase comprenne au moins une phase dopée du semi-conducteur dans laquelle le dopant est électriquement actif.

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