Method of manufacturing a semiconductor device comprising a...

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H - Electricity

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H01L 21/321 (2006.01) H01G 4/12 (2006.01) H01L 21/02 (2006.01) H01L 21/443 (2006.01) H01L 27/108 (2006.01) H01L 27/115 (2006.01) H01L 29/49 (2006.01) H01L 29/92 (2006.01)

Patent

CA 2068020

PHN 13696 15.04.1992 ABSTRACT: Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor. A method of manufacturing a semiconductor device whereby a capacitor (2) is provided on a surface (10) of a semiconductor body (3) with a semiconductor element (1) in that a lower electrode (11), an oxidic ferroelectric dielectric (12) and an upper electrode (13) are provided in that order, the upper electrode not covering an edge of the dielectric, after which an insulating layer (14) with superimposed metal conductor tracks is provided. According to the invention, the edge of the dielectric (12) not covered by the upper electrode (13) is coated with a coating layer (14, 20, or 30) practically imperviable to hydrogen, after which the device is heated in a hydrogen- containing atmosphere. Heating in a hydrogen atmosphere neutralizes dangling bonds which arise during deposition of the conductor tracks on the insulating layer, while the coating layer protects the dielectric from attacks by hydrogen. The semiconductor device then has a shorter access time. Fig. 1.

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