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Patent
H - Electricity
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H01L 21/00 (2006.01) B82Y 30/00 (2011.01) H01L 29/02 (2006.01) H01L 29/04 (2006.01)
Patent
CA 2609537
Methods for preparing nanocrystalline-Si/SiO2 composites by treating hydrogen silsesquioxane (HSQ) under reductive thermal curing conditions are described. Also described are methods of preparing silicon nanoparticles by acid etching the nanocrystalline-Si/SiO2 composites.
L'invention concerne des procédés permettant de préparer des composites Si/SiO2 nanocristallins par traitement au silselsquioxane d'hydrogène (HSQ), dans des conditions de polymérisation thermique réductrices. L'invention concerne également des procédés permettant de préparer des nanoparticules de silicium par attaque à l'acide des composites Si/SiO2 nanocristallins.
Hessel Colin Michael
Veinot Jonathan Gordon Conn
Gowling Lafleur Henderson Llp
The Governors Of The University Of Alberta
LandOfFree
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