C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/40 (2006.01) H01B 12/00 (2006.01) H01B 12/10 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2064428
Abstract of the Disclosure A process for depositing successively a plurality of thin films on a bottom superconductor layer made of oxide superconductor deposited on a substrate in a single chamber successively preferably under one of two conditions: in a first condition, deposition of a first thin film to be deposited directly on the bottom superconductor layer is effected under such condition that the bottom superconductor layer is heated above the oxygen-trap temperature (Ttrap) at which oxygen enter into the oxide superconductor but lower than a film forming temperature of the bottom superconductor layer, and in a second condition, the bottom superconductor layer is heated in ultra-high vacuum at a temperature which is lower than said oxygen-trap temperature (Ttrap) but higher than a temperature which is lower by 100 °C than the oxygen-trap temperature (Ttrap - 100 °C) and then the first thin film is deposited thereon.
Iiyama Michitomo
Nakamura Takao
Tanaka So
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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