G - Physics – 03 – F
Patent
G - Physics
03
F
96/266, 149/12.1
G03F 7/42 (2006.01) C08J 7/12 (2006.01) C09K 13/00 (2006.01) G03F 7/20 (2006.01) G03F 7/26 (2006.01) H01L 21/311 (2006.01)
Patent
CA 2037490
A Wet-etch composition for polyamic acids and partially cured polyamic acids comprising an aqueous solution having a major portion of water, a substituted hydrocarbon solvent and a non-ionic base that is strong enough to deprotonate the polyamic acid or a partially cured polyamic acid in a weight ratio of 0.1-49:49-0.1, with the proviso that the composition contains less than 1.0 percent ionic base. The present invention further provides a process for wet-etching polyamic acids or partially cured polyamic acids.
Beuhler Allyson Jeanne
Fjare Douglas Eric
Navar Cynthia Ann
Gowling Lafleur Henderson Llp
The Texas A&m University System
LandOfFree
Wet-etch process and composition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Wet-etch process and composition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wet-etch process and composition will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1492658