H - Electricity – 01 – L
Patent
H - Electricity
01
L
117/102, 32/27,
H01L 21/56 (2006.01) B05C 11/08 (2006.01) B05D 3/12 (2006.01) B05D 5/12 (2006.01) H01L 21/00 (2006.01) H01L 21/312 (2006.01) H01L 21/316 (2006.01) H01L 23/29 (2006.01)
Patent
CA 2017719
A method is disclosed for applying spin-on glass (SOG) to a substrate over low-melting point, non-refractory materials such as aluminum. The spin-on glass is applied to the substrate in a moisture-free environment to minimize reverse hydrolysis during curing. This results in the formation of higher quality films, especially from inorganic SOGs.
Cette invention concerne une méthode de dépôt de verre par rotation sur un substrat en matériau non réfractaire à bas point de fusion tel que l'aluminium. Le dépôt de verre par rotation se fait sous atmosphère exempte d'humidité pour minimiser l'hydrolyse inverse en cours de cuisson. Cette façon de faire donne des pellicules de meilleure qualité, en particulier dans le cas de verres inorganiques.
Marks & Clerk
Zarlink Semiconductor Inc.
LandOfFree
Moisture-free sog process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Moisture-free sog process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Moisture-free sog process will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1500540