H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/123
H01L 27/00 (2006.01) H01L 23/64 (2006.01)
Patent
CA 2023678
ABSTRACT OF THE DISCLOSURE In a semiconductor device used in a light reception circuit or the like, a wide receiving bandwidth of a reception signal and a high receiving sensitivity are desired. However, when the resistance of resistor of a signal receiving section is increased to improve the sensitivity, the receiving bandwidth is narrowed. In addition, when the capacitance of a capacitor for removing a direct-current component of the reception signal is increased to increase the receiving bandwidth, the floating capacitance present in the DC cutoff capacitor is increased. As a result, the receiving bandwidth is not increased. For this reason, according to this invention, a second conductive pattern is formed to be electrically insulated from a first conductive pattern set at a common reference voltage for the device, a metal film formed on the back side of the semiconductor chip is fixed to the second conductive pattern, and the voltage of the DC cutoff capacitor is transferred to the second conductive pattern. Therefore, a variation in voltage of the capacitor is equal to a variation in voltage of the second conductive pattern underlying the capacitor, and there is almost no floating capacitance present in the capacitor. The capacitance of the DC cutoff capacitor and the resistance of the resistor of the signal receiving section can be set to be large.
Marks & Clerk
Sumitomo Electric Industries Ltd.
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