Thin film transistor

Details Thin film transistor Thin film transistor

H - Electricity

01

L

H01L 29/22 (2006.01) H01L 29/786 (2006.01) H01L 49/02 (2006.01)

Patent

CA 2605827

A thin film transistor is disclosed comprising comprises a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by liquid depositing a zinc oxide nanodisk composition. The thin film transistor has good mobility and on/off ratio.

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