Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

H01L 29/812 (2006.01) H01L 29/778 (2006.01)

Patent

CA 2089398

ABSTRACT OF THE DISCLOSURE A high speed transistor featured by a wide operation range and a high gain has a channel layer of three-layer structure having undoped GaInAs layers 130a and 130b arranged above and beneath a GaAs layer 140 including at least one delta doped layer (n-type). A cap layer 150 which is an undoped GaAs layer and a buffer layer 120 are formed above and beneath the channel layer of three-layer structure, on a substrate 110. A gate electrode 340, and a source region 350a, a drain region 350b, a source electrode 360 and a drain electrode 370 which are self-aligned to the gate electrode are formed.

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