Method for radiofrequency wave etching

B - Operations – Transporting – 23 – K

Patent

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B23K 10/00 (2006.01) H01J 37/32 (2006.01) H05H 1/18 (2006.01)

Patent

CA 2182342

A method for selective controlled etching of a material particularly by sequentially switching between two (2) or more modes of radiofrequency waves and/or by distance from a source of the microwaves. The modes and/or distance are selected depending upon the surface of the material to be etched. The etching is rapidly conducted at 0.5 mtorr to 10 torr, preferably using microwave plasma etching.

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