C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/44 (2006.01) C23C 16/04 (2006.01) C23C 16/14 (2006.01) H01L 21/285 (2006.01) H01L 21/316 (2006.01) H01L 21/768 (2006.01)
Patent
CA 2137567
Methods of chemical vapor deposition (CVD) are disclosed wherein high quality films are deposited on patterned wafer substrates (14). In the methods, a patterned wafer (14) is rotated about an axis thereof in a CVD reaction chamber (10) and react- ant gases are directed into the reaction chamber (10) and toward the patterned wafer substrate (14) in a direction generally per- pendicular to the plane of rotation of the wafer. The reaction chamber (10) is maintained at a suitable pressure and the wafer is heated to a suitable temperature whereby a high quality film is deposited by CVD on the patterned wafer substrate (14). The pro- cess is applicable to deposit elemental films, compound films, alloy films and solid solution films, and is particularly advanta- geous in that high film deposition rates and high reactant conversion rates are achieved.
Foster Robert F.
Rebenne Helen E.
Macrae & Co.
Tokyo Electron Limited
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