H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/24 (2006.01) C23C 14/28 (2006.01)
Patent
CA 2158490
The method for forming a superconducting films of complex oxide compounds in a process chamber according to the present invention comprises the steps of: (a) placing a substrate near a target in a chamber so that the substrate is positioned to be generally perpendicular to a surface of target, the target comprising a target material of complex oxide compounds; and (b) irradiating a laser beam to the surface of the target to vaporize or sublime the target material forming over the target a flame-shaped plume having an axis generally perpendicular to the surface of the target so that the target material is deposited onto a surface of the substrate, the surface of the substrate maintaining the position to be generally perpendicular to the surface of the target and being generally parallel to the axis of the plume, wherein the target rotates on an axis perpendicular to the surface of the target and the substrate rotates on an axis perpendicular to the surface of the substrate (off-axis geometry), and wherein the laser beam scans the surface of the target. The chamber pressure Pc for the off-axis geometry laser ablation should be 0.8 Torr Pc 1.5 Torr for Y1Ba2Cu3O7-x film.
Itozaki Hideo
Nagaishi Tatsuoki
Marks & Clerk
Sumitomo Electric Industries Ltd.
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