H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 27/15 (2006.01) H01S 5/042 (2006.01) H01S 5/062 (2006.01) H01S 5/026 (2006.01)
Patent
CA 2051453
A long wavelength transmitter OEIC includes a transverse direction current injection type semiconductor laser and a high electron mobility transistor which are integrated on a semi-insulating substrate. The semiconductor laser includes at least an AlGaInAs lower cladding layer, a quantum well active layer and a high resistivity AlGaInAs upper cladding layer successively grown on the semi-insulating substrate, disordered regions formed in the quantum well active layer by diffusions of p type and n type dopant, and an active region sandwiched by the disordered regions. The transistor includes an operating layer and a carrier supplying layer both comprising AlGaInAs series material and formed on the high resistivity AlGaInAs upper cladding layer. This transistor uses the upper cladding layer as a leakage current preventing layer. This structure can be formed by only one epitaxial growth, resulting in low costs. In addition, since the above layers are successively grown on a flat substrate, photolithography process for forming a gate of HEMT can be performed on a flat surface, so that a fine gate pattern can be formed at high precision. As a result, a transmitter OEIC performing high speed modulation can be expected.
G. Ronald Bell & Associates
Mitsubishi Denki Kabushiki Kaisha
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