Semiconductor radiation detector with a modified internal...

Details Semiconductor radiation detector with a modified internal... Semiconductor radiation detector with a modified internal...

H - Electricity

01

L

H01L 27/146 (2006.01) H01L 29/76 (2006.01) H01L 31/112 (2006.01) H01L 31/115 (2006.01)

Patent

CA 2577198

A semiconductor radiation detector device comprises a conductive backside layer (102) of first conductivity type and a bulk layer (103). Opposite to the conductive backside layer (102) there are a modified internal gate layer (104) of second conductivity type, a barrier layer (105) of the first conductivity type and pixel dopings (110, 112, 506, 510, 512) of the second conductivity type. The pixel dopings are adapted to be coupled to a pixel voltage, which is defined as a potential difference to a potential of the conductive backside layer (102), and which creates potential minima inside the detector material for trapping the signal charges.

L'invention concerne un détecteur de rayonnement de semi-conducteur qui comprend une couche dorsale conductrice (102) à conductivité de premier type et une couche massive (103). A l'opposé de la couche dorsale (102) se trouve une couche de grille interne modifiée (104) à second type de conductivité, une couche barrière (105) à conductivité du premier type et des dopages de pixel (110, 112, 506, 510, 512) à conductivité du second type. Les dopages peuvent être couplés à une tension de pixel, définie comme une différence de potentiel par rapport à un potentiel de la couche dorsale (102), et établissant des minima de potentiel à l'intérieur du matériau détecteur pour le piégeage des charges de signal.

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