Composition and method for off-axis growth sites on nonpolar...

H - Electricity – 01 – L

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H01L 21/306 (2006.01) H01L 21/027 (2006.01) H01L 21/18 (2006.01) H01L 21/20 (2006.01) H01L 21/26 (2006.01) H01L 21/308 (2006.01) H01L 29/12 (2006.01)

Patent

CA 2130739

- 18 - COMPOSITION AND METHOD FOR OFF-AXIS GROWTH SITES ON NONPOLAR SUBSTRATES Abstract: Nonpolar substrates comprising off-axis growth regions for the growth of polar semiconductors, and a method for making such substrates, are disclosed. According to the invention, an erodible material, such as a photoresist, is applied to a substrate at a site and is exposed to radiation at that site which has an linear variation in energy at the surface of the erodible material. Due to this variation in exposure energy, a taper results in the erodible material after development. The tapered region is then etched in a manner which etches both the erodible layer and the underlying substrate. The taper in the erodible layer provides a varying attenuation during the etching process such that the taper of the erodible layer is transferred to the substrate.

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