Surface-normal semiconductor optical cavity devices

Details Surface-normal semiconductor optical cavity devices Surface-normal semiconductor optical cavity devices

G - Physics

02

F

G02F 1/21 (2006.01) G02F 1/017 (2006.01) H01L 33/00 (2006.01) H01S 5/183 (2006.01) H01S 3/085 (1995.01)

Patent

CA 2147315

A multi-layer mirror structure included in a surface-normal semiconductor optical cavity is fabricated in a deposition reactor dedicated to that purpose alone. Additional layers of the device are subsequently deposited on top of the mirror structure in a second reactor. In practice, the dedicated reactor produces layers whose thickness variations over their entire extents are considerably less than the thickness variations of layers made in the second reactor. This coupled with the fact that the actual achieved thickness of the mirror structure can be conveniently measured before commencing deposition of a prescribed thickness of the additional layers makes it possible to fabricate a specified-thickness optical cavity within tight tolerances in a high-yield manner.

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