H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/60 (2006.01) H01L 23/49 (2006.01) H01L 23/64 (2006.01) H01L 23/66 (2006.01)
Patent
CA 2345786
The present invention relates to a method and device for interconnecting radio frequency power SiC field effect tansistors. To improve the parasitic source inductance, advantage is taken of the small size of the transisitors, wherein the bonding pads are placed on both sides of the die in such a way that most of the source bonding wires (6) go perpendicularly to the gate and drain bonding wires (7, 8). Multiple bonding wires can be connected to the source bonding pads, reducing the source inductance. An additional advantage comes from such arrangement by reducing the mutual inductance between source/gate and between source/drain due to the orthogonal wire placement.
La présente invention concerne un procédé et un dispositif permettant d'interconnecter des transistors SIC à effet de champ pour puissance haute fréquence. Pour améliorer l'inductance de la source parasite, on tire parti de la petite taille des transistors, dans lesquels les plots de connexion sont disposés de telle sorte de part et d'autre de la matrice que la majeure partie des fils de liaison de la source sont disposés perpendiculairement aux fils de liaison de porte et de drain (7, 8). De multiples fils de liaison peuvent être reliés aux plots de connexion de la source, ce qui réduit l'inductance de la source entre la source et la porte d'une part, entre la source et le drain d'autre part, compte tenu de la disposition orthogonale des fils.
Johansson Ted
Litwin Andrej
Marks & Clerk
Telefonaktiebolaget Lm Ericsson
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