Compound semi-conductors and controlled doping thereof

Details Compound semi-conductors and controlled doping thereof Compound semi-conductors and controlled doping thereof

H - Electricity

01

L

H01L 21/205 (2006.01) C30B 25/00 (2006.01) C30B 25/02 (2006.01) C30B 25/16 (2006.01) C30B 25/18 (2006.01) C30B 29/06 (2006.01)

Patent

CA 2113336

A method of controlling the amount of impurity incorpo- ration in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.

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