Alloyed semiconductor quantum dots and...

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H01L 29/12 (2006.01) H01L 29/06 (2006.01) H01L 29/26 (2006.01) H01L 35/02 (2006.01)

Patent

CA 2524350

An alloyed semiconductor quantum dot comprising an alloy of at least two semiconductors, wherein the quantum dot has a homogeneous composition and is characterized by a band gap energy that is non-linearly related to the molar ratio of the at least two semiconductors; a series of alloyed semiconductor quantum dots related thereto; a concentration-gradient quantum dot comprising an alloy of a first semiconductor and a second semiconductor, wherein the concentration of the first semiconductor gradually increases from the core of the quantum dot to the surface of the quantum dot and the concentration of the second semiconductor gradually decreases from the core of the quantum dot to the surface of the quantum dot; a series of concentration-gradient quantum dots related thereto; in vitro and in vivo methods of use; and methods of producing the alloyed semiconductor and concentration-gradient quantum dots and the series of quantum dots related thereto.

L'invention concerne un point quantique à alliage de semi-conducteurs comprenant un alliage d'au moins deux semi-conducteurs, ce point quantique possédant une composition homogène et étant caractérisé par une énergie de bande interdite associée de façon non linéaire au rapport molaire des semi-conducteurs, ainsi qu'une série de points quantiques à alliage de semi-conducteurs associée. L'invention concerne par ailleurs un point quantique à gradient de concentration comprenant un alliage d'un premier semi-conducteur et d'un second semi-conducteur, la concentration du premier semi-conducteur augmentant progressivement du coeur du point quantique à sa surface et la concentration du second semi-conducteur diminuant progressivement du coeur du point quantique à sa surface, ainsi qu'une série de points quantiques à gradient de concentration associée. L'invention concerne en outre des méthodes d'utilisation in vitro et in vivo, ainsi que des procédés de production de ces points quantiques à alliage de semi-conducteurs et à gradient de concentration et des séries de points quantiques associées.

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