Infrared sensor and method of manufacturing the same

Details Infrared sensor and method of manufacturing the same Infrared sensor and method of manufacturing the same

H - Electricity

01

L

H01L 31/04 (2006.01) C23C 14/08 (2006.01) G01J 5/12 (2006.01) H01L 35/00 (2006.01) H01L 35/34 (2006.01)

Patent

CA 2305099

A SiO2 layer is formed on a heat sink section having a cavity by thermal oxidation and an aluminum oxide layer is formed on the SiO2 layer by an electron beam evaporation process at a substrate temperature of 60°C or less and at a deposition rate of 0.8 nm/s or less. The resulting aluminum oxide film is amorphous and has partial oxygen defects. The SiO2 layer and the aluminum oxide layer constitute a heat insulating thin-film. A thermoelectric conversion element and an infrared-absorbing layer are formed on the heat insulating thin-film to form an infrared sensor. The infrared sensor can be produced at low production costs and has high sensitivity.

Affiliated with

Also associated with

Rating

Infrared sensor and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Infrared sensor and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infrared sensor and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1646001