H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/128
H01L 21/336 (2006.01) H01L 29/423 (2006.01) H01L 29/45 (2006.01) H01L 29/49 (2006.01) H01L 29/78 (2006.01)
Patent
CA 2026126
- 23 - DESCRIPTIVE ABSTRACT Process for the production of a high voltage, MIS integrated circuit. This process for the production of an integrated circuit on a semi- conductor substrate having MIS transistors, whose sources (18, 32) and drains (20, 34) consist of double junctions and whose gates are formed in a semiconducting layer, comprising a first implantation (14) of ions of a given conductivity type in the substrate and at a given dose, in order to form there the first source (18) and drain (20) junctions, followed by a second implantation (30) of ions of the same type as the first, at a higher dose than that of the first implantation in order to form said double junctions, said process is characterized in that between the first and second implantations, a conductive layer (28) is epitaxied on said first junctions (18, 20) and on the gates (8a), the second implantation being formed through said epitaxied layer in such a way that the double junctions are partly formed there. (Fig. 1G) B 10217.3 LC
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